Isimiso se-Plasma Etcher

I-Inductively Coupled Plasma Etch (ICPE) ingumphumela wenhlanganisela yezinqubo zamakhemikhali nezomzimba. Umgomo wayo oyisisekelo ukuthi, ngaphansi kwevacuum kanye nengcindezi ephansi, ifrikhwensi yomsakazo ekhiqizwa amandla kagesi e-ICP RF iphumela kukhoyili yokuhlanganisa i-toroidal. I-etching gas exubile engxenyeni ethile ihlanganiswa nokuphuma kokukhanya, ikhiqize-i-plasma ephezulu. Ngaphansi kwethonya le-RF engaphansi kwe-electrode, le plasma ibhomuza indawo engaphansi, yephula amabhondi amakhemikhali wento ye-semiconductor endaweni enephethini ye-substrate. Lezi zinto eziguquguqukayo zibhekana negesi ebambayo ukuze zenze izinhlanganisela ezishintshashintshayo, ezibe sezihlukana ne-substrate njengamagesi bese zimpontshelwa ngaphandle komugqa we-vacuum.